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The effects of surface finish and grain size on the strength of sintered silicon carbide [microform] / Young Hyuk You ... [et al.]
Bib ID 4473212
Format MicroformMicroform, BookBook
Description Washington, D.C. : National Aeronautics and Space Administration, [1985] 
1 v. 
Series

NASA technical memorandum ; 77871.

Notes

Distributed to depository libraries on microfiche.

Reproduction Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 1986]. 1 microfiche. 
Subjects Silicon carbide.  |  Grain size.  |  Silicon carbides.  |  Sintering.  |  Surface finishing.
Other authors/contributors You, Young Hyuk  |  United States. National Aeronautics and Space Administration
Available From NASA 
Govt. Doc. Number NAS 1.15:77871 
000 01267nam a2200337Ka 4500
001 4473212
005 20080911121243.0
007 he bmb024bbca
008 080811s1985    dcu     b    f000 0 eng d
035 |a(OCoLC)243464661
035 |a(OCoLC)ocn243464661
037 |aN 86-21616|bNASA
040 |aGPO|cGPO|dMvI
074 |a0830-D (MF)
086 0 |aNAS 1.15:77871
091 |amfm
245 0 4 |aThe effects of surface finish and grain size on the strength of sintered silicon carbide|h[microform] /|cYoung Hyuk You ... [et al.].
260 |aWashington, D.C. :|bNational Aeronautics and Space Administration,|c[1985]
300 |a1 v.
490 1 |aNASA technical memorandum ;|vNASA TM-77871
533 |aMicrofiche.|b[Washington, D.C. :|cNational Aeronautics and Space Administration,|d1986].|e1 microfiche.
500 |aDistributed to depository libraries on microfiche.
650 0 |aSilicon carbide.
650 7 |aGrain size.|2nasat
650 7 |aSilicon carbides.|2nasat
650 7 |aSintering.|2nasat
650 7 |aSurface finishing.|2nasat
700 1 |aYou, Young Hyuk.
710 1 |aUnited States.|bNational Aeronautics and Space Administration.
830 0 |aNASA technical memorandum ;|v77871.
984 |aANL|cmc SUDOC NAS 1.15:77871
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